Threshold Voltage Dependence on Bias for FinFET using Analytical Potential Model
نویسندگان
چکیده
منابع مشابه
Analytical Threshold Voltage Computations for 22 nm Silicon-on-Diamond MOSFET Incorporating a Second Oxide Layer
In this paper, for the first time, an analytical equation for threshold voltage computations in silicon-on-diamond MOSFET with an additional insulation layer is presented; In this structure, the first insulating layer is diamond which covered the silicon substrate and second insulating layer is SiO2 which is on the diamond and it is limited to the source and drain on both sides. Analytical solu...
متن کاملAnalytical Model of Surface Potential and Threshold Voltage of Biaxial Strained Silicon Nmosfet including Qme
In this paper physics based analytical model for threshold voltage of nanoscale biaxial strained nMOSFET has been presented. The maximum depletion depth and surface potential in biaxial strained–Si nMOSFET is determined, taking into account both the quantum mechanical effects (QME) and effects of strain in inversion charge sheet. The results show that a significant decrease in threshold voltage...
متن کاملAnalytical models for channel potential, threshold voltage, and subthreshold swing of junctionless triple-gate FinFETs
Analytical models for channel potential, threshold voltage, and subthreshold swing of the short-channel fin-shaped field-effect transistor (FinFET) are obtained. The analytical model results are verified against simulations and good agreements are observed. Analytical expressions for subthreshold swing, drain induced barrier lowering effect, and threshold voltage roll-off characteristics are pr...
متن کاملGeometrical Structure and Interface Dependence of Bias Stress Induced Threshold Voltage Shift in C60-Based OFETs
The influence of the nature of interface between organic semiconductor and gate dielectric on bias stress electrical stability of n-type C60-based organic field effect transistors (OFETs) was studied. The bias stress induced threshold voltage (Vth) shift was found to depend critically on the OFET device structure: the direction of V(th) shift in top-gate OFETs was opposite to that in bottom-gat...
متن کاملThreshold Voltage Roll-Off Due to Channel Length Reduction for a Nanoscale n-channel FinFET
Abstract: As the device feature size enters into the nanoscale, the modeling and simulation of short channel effects in FinFETs devices become challenging. In this paper an easy approach to model short channel effects threshold voltage roll-off in nanoscale n-channel FinFETs is presented. The decrease of threshold voltage with decrease in gate length is a well-known short channel effect called ...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Journal of information and communication convergence engineering
سال: 2010
ISSN: 2234-8255
DOI: 10.6109/jicce.2010.8.1.107